Datasheet Infineon BSS149 — 数据表

BSS119 Rev. 1.3 SIPMOSп›љ Small-Signal-Transistor
Feature Product Summary N-Channel VDS Enhancement mode RDS(on) Logic Level ID dv/dt rated 100 V 6 Ω 0.17 A PG-SOT23
3 Drain
pin 3
Gate
pin1 2 Source
pin 2 1 VPS05161 Type Package Pb-free Tape and Reel Information Marking BSS119 PG-SOT23 Yes L6327: 3000 pcs/reel sSH Maximum Ratings, at Tj = 25 В°C, unless otherwise specified
Parameter Symbol Continuous drain current ID Value Unit
A TA=25В°C 0.17 TA=70В°C 0.13
I D puls 0.68 dv/dt 6 Gate source voltage VGS В±20 V Power dissipation Ptot 0.36 W -55. +150 В°C Pulsed drain current
TA=25В°C Reverse diode dv/dt kV/Вµs IS=0.17A, VDS=80V, di/dt=200A/Вµs, Tjmax=150В°C TA=25В°C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2006-12-01 BSS119 Rev. 1.3
Thermal Characteristics
Parameter Symbol Values Unit min. typ. max. -350 Characteristics
Thermal resistance, junction -ambient RthJS K/W at minimal footprint
Electrical Characteristics, at Tj = 25 В°C, unless otherwise specified
Parameter Symbol Values Unit min. typ. max. V(BR)DSS 100 -VGS(th) 1.3 1.8 2.3 Static Characteristics
Drain-source breakdown voltage V VGS=0, ID =250ВµA Gate threshold voltage, VGS = VDS
ID=50µA Zero gate voltage drain current µA I DSS VDS=100V, VGS=0, Tj=25°C -0.05 0.1 VDS=100V, VGS=0, Tj=150°C -0.5 5 I GSS -10 100 nA RDS(on) -4.9 10 Ω RDS(on) -3.4 6 Gate-source leakage current
VGS=20V, VDS=0 Drain-source on-state resistance
VGS=4.5V, ID=0.13 A Drain-source on-state resistance
VGS=10V, ID=0.17A Page 2 2006-12-01 BSS119 Rev. 1.3
Electrical Characteristics, at Tj = 25 В°C, unless otherwise specified
Parameter Symbol Conditions Values Unit min. typ. max. 0.08 0.17 -S …