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HEXFET Power MOSFET
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PD -94436C IRF2804
IRF2804S
IRF2804L AUTOMOTIVE MOSFET HEXFET® Power MOSFET Features
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Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V
RDS(on) = 2.0mΩ G Description ID = 75A S Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide variety of other applications. D2Pak
IRF2804S TO-220AB
IRF2804 TO-262
IRF2804L Absolute Maximum Ratings …