IPD70N04S3-07 OptiMOSВ®-T Power-Transistor Product Summary
V DS 40 V R DS(on),max 6.0 mΩ ID 82 A Features N-channel -Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD70N04S3-07 PG-TO252-3-11 QN0407 Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Symbol Continuous drain current ID Conditions
T C=25 В°C, V GS=10 V
T C=100 В°C,
V GS=10 V1) Value
82 Unit
A 58 Pulsed drain current1) I D,pulse T C=25 В°C 280 Avalanche energy, single pulse E AS I D=50 A 145 mJ Gate source voltage V GS В±20 V Power dissipation P tot 79 W Operating and storage temperature T j, T stg -55 . +175 В°C T C=25 В°C IEC climatic category; DIN IEC 68-1 Rev. 1.0 55/175/56 page 1 2007-05-03 IPD70N04S3-07 Parameter Symbol Values Conditions Unit min. typ. max. -1.9 minimal footprint -62 6 cm2 cooling area2) -40 Thermal characteristics1)
Thermal resistance, junction -case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 В°C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 40 -Gate threshold voltage V GS(th) V DS=V GS, I D=50 ВµA 2.1 3.0 4.0 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V,
T j=25 В°C -1 -100 V DS=40 V, V GS=0 V,
T j=125 °C2) V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V -100 nA Drain-source on-state resistance RDS(on) V GS=10 V, I D=70 A -4.9 6.0 mΩ Rev. 1.0 page 2 2007-05-03 IPD70N04S3-07 Parameter Symbol Values Conditions Unit min. typ. max. -2050 2700 -610 800 Dynamic characteristics1)
Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss -90 130 Turn-on delay time t d(on) -13 -Rise time tr -8 -Turn-off delay time t d(off) -17 -Fall time tf -7 -Gate to source charge Q gs -12 16 Gate to drain charge Q gd -8 14 Gate charge total Qg -30 40 Gate plateau voltage V plateau -6.0 -V -70 A -280 -1 1.3 V -34 -ns -36 -nC V GS=0 V, V DS=25 V,
f =1 MHz V DD=20 V, V GS=10 V,
I D=70 A, R G=3.5 Ω pF ns Gate Charge Characteristics1) V DD=32 V, I D=70 A,
V GS=0 to 10 V nC Reverse Diode
Diode continous forward current1) IS Diode pulse current1) I S,pulse Diode forward voltage V SD Reverse recovery time1) t rr Reverse recovery charge1) Q rr 1) T C=25 В°C
V GS=0 V, I F=70 A,
T j=25 В°C
V R=20 V, I F=I S,
di F/dt =100 A/Вµs Defined by design. Not subject to production test. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 Вµm thick) copper area for …