IGC04R60DE
TRENCHSTOPTM RC-Series for hard switching applications IGBT chip with monolithically integrated diode in packages offering space saving advantage
Features:
TM
TRENCHSTOP Reverse Conducting (RC) technology for
600V applications offering: Optimised VCEsat and VF for low conduction losses Smooth switching performance leading to low EMI levels Very tight parameter distribution Operating range of 1 to 20kHz Maximum junction temperature 175В°C Short circuit capability of 5Ојs Best in class current versus package size performance Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models:
http://www.infineon.com/igbt/
Applications:
Motor drives Used for:
Discrete components and molded modules Chip Type VCE ICn Die Size Package IGC04R60DE 600V 4A 1.98 x 1.85 mm2 sawn on foil Mechanical Parameters
Raster size 1.98 x 1.85 Emitter pad size see chip drawing
mm Gate pad size 2 see chip drawing Area: total / active IGBT / active Diode 3.663 / 1.464 / 0.339 Thickness 70 Вµm Wafer size 200 mm Max.possible chips per wafer
Passivation frontside 7658
Photoimide Pad metal 3200 nm AlSiCu Backside metal Ni Ag –system Die bond Electrically conductive epoxy glue and soft solder
(temperature budget: 290В°C for 1min. or 260В°C for 1.5min.) Wire bond Al, <250Вµm
пѓ† 0.65mm ; max 1.2mm Reject ink dot size
for original and
sealed MBB bags Ambient atmosphere air, Temperature 17°C – 25°C,
< 6 month Storage environment
for open MBB bags Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas,
Humidity <25%RH, Temperature 17°C – 25°C, < 6 month Edited by INFINEON Technologies, IFAG IMM PSD D, L7383B, Edition 1.2, 31.05.2013 IGC04R60DE
TRENCHSTOPTM RC-Series for hard switching applications Maximum Ratings
Parameter Symbol Value Unit 600 V 1) A Collector-Emitter voltage, Tvj =25 п‚°C VCE DC collector current, limited by Tvj max IC Pulsed collector current, tp limited by Tvj max Ic,puls 12 A Gate emitter voltage VGE п‚±20 V Junction temperature range Tvj,max -40 .+175 В°C Operating junction temperature Tvj,op,max -40 .+175 п‚°C 5 Вµs Short circuit data 2 )3) VGE = 15V, VCC = 400V, Tvj = 150В°C tSC I C , m a x = 8A, V C E , m a x = 600V, Tvj,op п‚Ј Tvj,op,max Safe operating area IGBT 2 )3) I F , m a x = 8A, V R , m a x = 600V, Safe operating area Diode 2 ) P m a x =3.7 kW , Tvj,op п‚Ј Tvj,op,max 1) depending on thermal properties of assembly …