Datasheet IRG4RC10U - International Rectifier IGBT — 数据表

详细说明

Manufacturer: International Rectifier

Description: IGBT

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Docket:
PD - 91572A
IRG4RC10U
INSULATED GATE BIPOLAR TRANSISTOR
Features
· UltraFast: Optimized for high operating frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode) · Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation · Industry standard TO-252AA package

Specifications:

• Collector-to-Emitter Breakdown Voltage: 600 V
• Current Temperature: 25°C
• DC Collector Current: 8.5 A
• Full Power Rating Temperature: 25°C
• Max Current Ic Continuous a: 8.5 A
• Max Fall Time: 180 ns
• Max Power Dissipation: 38 W
• Max Voltage Vce Sat: 2.6 V
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• Operating Temperature Range: -55°C to +150°C
• Package / Case: TO-252
• Power Dissipation: 38 W
• Pulsed Current Icm: 34 A
• Rise Time: 11 ns
• Transistor Case Style: TO-252
• Transistor Polarity: N
• Transistor Type: IGBT

RoHS: No