Datasheet Microchip DN1509K1-G — 数据表

DN1509
N-Channel, Depletion-Mode, Vertical DMOS FET
Features Description •
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• This low threshold, depletion-mode, normally-on, transistor utilizes an advanced vertical Diffusion Metal
Oxide Semiconductor (DMOS) structure and a well
proven silicon-gate manufacturing process. This combination produces a device with the power-handling
capabilities of bipolar transistors, plus the high-input
impedance and positive-temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary breakdown. High-input impedance
Low-input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakages Applications
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