Datasheet Microchip DN3135N8-G — 数据表

DN3135
N-Channel Depletion-Mode Vertical DMOS FET
Features General Description •
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• The DN3135 is a low-threshold, Depletion-mode
(normally-on) transistor that utilizes an advanced
vertical DMOS structure and a well-proven silicon gate
manufacturing process. This combination produces a
device with the power handling capabilities of bipolar
transistors and the high input impedance and positive
temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally induced
secondary breakdown. High Input Impedance
Low Input Capacitance
Fast Switching Speeds
Low On-resistance
Free from Secondary Breakdown
Low Input and Output Leakage Applications
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