Datasheet Microchip DN3535N8-G — 数据表

Supertex inc. DN3535
N-Channel Depletion-Mode
Vertical DMOS FETs Features
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►► General Description High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage This low threshold depletion-mode (normally-on) transistor
utilizes an advanced vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown. Applications
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