Datasheet Microchip LND150 — 数据表
| 制造商 | Microchip |
| 系列 | LND150 |
N沟道耗尽型DMOS FET
数据表
Datasheet LND150
PDF, 610 Kb, 语言: en, 文件上传: Nov 15, 2017, 页数: 7
N-Channel Depletion-Mode DMOS FET Features
N-Channel Depletion-Mode DMOS FET Features
从文件中提取
价格
状态
| LND150K1-G | LND150N3-G | LND150N3-G-P002 | LND150N3-G-P003 | LND150N3-G-P013 | LND150N3-G-P014 | LND150N8-G | |
|---|---|---|---|---|---|---|---|
| Lifecycle Status | Production (Appropriate for new designs but newer alternatives may exist) | Production (Appropriate for new designs but newer alternatives may exist) | Production (Appropriate for new designs but newer alternatives may exist) | Production (Appropriate for new designs but newer alternatives may exist) | Production (Appropriate for new designs but newer alternatives may exist) | Production (Appropriate for new designs but newer alternatives may exist) | Production (Appropriate for new designs but newer alternatives may exist) |
打包
| LND150K1-G | LND150N3-G | LND150N3-G-P002 | LND150N3-G-P003 | LND150N3-G-P013 | LND150N3-G-P014 | LND150N8-G | |
|---|---|---|---|---|---|---|---|
| N | 1 | 2 | 3 | 4 | 5 | 6 | 7 |
| Package | SOT-23 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | SOT-89 |
参数化
| Parameters / Models | LND150K1-G | LND150N3-G | LND150N3-G-P002 | LND150N3-G-P003 | LND150N3-G-P013 | LND150N3-G-P014 | LND150N8-G |
|---|---|---|---|---|---|---|---|
| Automotive Recommended | No | No | No | No | No | No | No |
| BVdsx min, V | 500 | 500 | 500 | 500 | 500 | 500 | 500 |
| Lead Count | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Package Width | 1.3mm | - | - | - | - | - | - |
| RDS, Ω | 1000 | 1000 | 1000 | 1000 | 1000 | 1000 | 1000 |
| Vgs(off) max, V | -3.0 | -3.0 | -3.0 | -3.0 | -3.0 | -3.0 | -3.0 |
| Vgs(off) min, V | -1.0 | -1.0 | -1.0 | -1.0 | -1.0 | -1.0 | -1.0 |
模型线
系列: LND150 (7)
制造商分类
- High-Voltage Interface > MOSFETs - Interface > Depletion-Mode N-Channel