Datasheet Motorola MTD1N60E — 数据表

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by MTD1N60E/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet
TMOS E−FET.
Power Field Effect Transistor
DPAK for Surface Mount MTD1N60E
Motorola Preferred Device TMOS POWER FET
1.0 AMPERE
600 VOLTS
RDS(on) = 8.0 OHM N−Channel Enhancement−Mode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage−blocking capability without
degrading performance over time. In addition this advanced TMOS
E−FET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drain−to−source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete …