Datasheet SKM200GB123D - Semikron IGBT MODULE, HALF BRIDGE — 数据表

详细说明

Manufacturer: Semikron

Description: IGBT MODULE, HALF BRIDGE

Specifications:

• Av Current Ic: 200 A
• Collector Emitter Voltage V(br)ceo: 1.2 kV
• Collector Emitter Voltage Vces: 3 V
• Current Ic Continuous a Max: 200 A
• Current Ic Continuous b Max: 180 A
• Current Temperature: 25°C
• DC Collector Current: 200 A
• External Depth: 51.4 mm
• External Length / Height: 30.5 mm
• External Width: 105.4 mm
• Fixing Centres: 93 mm
• Fixing Hole Diameter: 6.4 mm
• Mounting Type: Screw
• Number of Pins: 7
• Number of Transistors: 2
• Package / Case: SEMITRANS 3
• Power Dissipation Pd: 1.38 kW
• Power Dissipation Ptot Max: 1.38 kW
• Pulsed Current Icm: 400 A
• Rise Time: 100 ns
• Transistor Case Style: SEMITRANS 3
• Transistor Polarity: N Channel
• Transistor Type:
• Voltage Vces: 1.2 kV

RoHS: Yes