Datasheet 2N2222A - STMicroelectronics TRANSISTOR, NPN, 40 V, 0.6 A, TO18 — 数据表

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Manufacturer: STMicroelectronics

Description: TRANSISTOR, NPN, 40 V, 0.6 A, TO18

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Docket:
®
2N2219A 2N2222A
HIGH SPEED SWITCHES
PRELIMINARY DATA
DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case.

They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage. TO-18 TO-39

Specifications:

• Collector Emitter Voltage V(br)ceo: 40 V
• Collector Emitter Voltage Vces: 300 mV
• Continuous Collector Current Ic Max: 600 mA
• Current Ic @ Vce Sat: 150 mA
• Current Ic Continuous a Max: 800 mA
• Current Ic Fall Time Measurement: 150 mA
• DC Collector Current: 600 mA
• DC Current Gain Max: 300
• DC Current Gain Min: 100
• DC Current Gain: 150 mA
• Fall Time @ Ic: 60 ns
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Min: 300 MHz
• Gain Bandwidth ft Typ: 300 MHz
• Mounting Type: Through Hole
• Number of Pins: 3
• Number of Transistors: 1
• Package / Case: TO-18
• Pin Configuration: A
• Power Dissipation Pd: 500 mW
• Power Dissipation Ptot Max: 500 mW
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: TO-18
• Transistor Polarity: NPN
• Voltage Vcbo: 75 V

RoHS: Yes

Accessories:

• Fischer Elektronik - WLK 5