Datasheet Texas Instruments CSD17318Q2 — 数据表

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SLPS667A – FEBRUARY 2017 – REVISED JULY 2017 CSD17318Q2 30-V N-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Optimized for 5-V Gate Drive
Low Capacitance and Charge
Low RDS(ON)
Low-Thermal Resistance
Lead Free
RoHS Compliant
Halogen Free
SON 2-mm × 2-mm Plastic Package TA = 25°C 30 V Qg Gate Charge Total (4.5 V) 6.0 nC Qgd Gate Charge Gate-to-Drain Drain-to-Source On-Resistance VGS(th) PART NUMBER QTY CSD17318Q2 3000 CSD17318Q2T 12.6 mΩ 0.9 V 250 MEDIA PACKAGE SHIP 7-Inch Reel SON
2.00-mm Г— 2.00-mm
Plastic Package Tape
and
Reel TA = 25В°C VALUE UNIT VDS Drain-to-Source Voltage 30 V VGS Gate-to-Source Voltage В±10 V Continuous Drain Current (Package Limited) 21.5 ID IDM
PD 1 6 D D 3 13.9 VGS = 8 V Absolute Maximum Ratings Top View G VGS = 4.5 V (1) For all available packages, see the orderable addendum at
the end of the data sheet. This 30-V, 12.6-mО©, 2-mm Г— 2-mm SON NexFETв„ў
power MOSFET is designed to minimize losses in
power conversion applications and optimized for 5-V …