Datasheet Texas Instruments TLV8542DR — 数据表

制造商Texas Instruments
系列TLV8542
零件号TLV8542DR
Datasheet Texas Instruments TLV8542DR

500 nA RRIO纳米功率运算放大器8-SOIC -40至125

数据表

TLV8544, TLV8542 500 nA RRIO Nanopower Operational Amplifier datasheet
PDF, 1.5 Mb, 修订版: B, 档案已发布: Jun 20, 2017
从文件中提取

价格

状态

Lifecycle StatusActive (Recommended for new designs)
Manufacture's Sample AvailabilityYes

打包

Pin8
Package TypeD
Industry STD TermSOIC
JEDEC CodeR-PDSO-G
Package QTY2500
CarrierLARGE T&R
Device MarkingTL8542
Width (mm)3.91
Length (mm)4.9
Thickness (mm)1.58
Pitch (mm)1.27
Max Height (mm)1.75
Mechanical Data下载

参数化

Additional FeaturesCost Optimized,EMI Hardened
ArchitectureCMOS
CMRR(Typ)80 dB
GBW(Typ)0.008 MHz
Iq per channel(Max)0.00064 mA
Iq per channel(Typ)0.0005 mA
Number of Channels2
Offset Drift(Typ)0.8 uV/C
Operating Temperature Range-40 to 125 C
Output Current(Typ)15 mA
Package GroupSOIC
Package Size: mm2:W x L8SOIC: 29 mm2: 6 x 4.9(SOIC) PKG
Rail-to-RailIn,Out
RatingCatalog
Slew Rate(Typ)0.0035 V/us
Total Supply Voltage(Max)3.6 +5V=5, +/-5V=10
Total Supply Voltage(Min)1.7 +5V=5, +/-5V=10
Vn at 1kHz(Typ)264 nV/rtHz
Vos (Offset Voltage @ 25C)(Max)3.1 mV

生态计划

RoHSCompliant

模型线

系列: TLV8542 (2)

制造商分类

  • Semiconductors > Amplifiers > Operational Amplifiers (Op Amps) > Ultra-Low-Power Op Amps (<=10uA)