Datasheet Texas Instruments TLV8542DR — 数据表
制造商 | Texas Instruments |
系列 | TLV8542 |
零件号 | TLV8542DR |
500 nA RRIO纳米功率运算放大器8-SOIC -40至125
数据表
TLV8544, TLV8542 500 nA RRIO Nanopower Operational Amplifier datasheet
PDF, 1.5 Mb, 修订版: B, 档案已发布: Jun 20, 2017
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价格
状态
Lifecycle Status | Active (Recommended for new designs) |
Manufacture's Sample Availability | Yes |
打包
Pin | 8 |
Package Type | D |
Industry STD Term | SOIC |
JEDEC Code | R-PDSO-G |
Package QTY | 2500 |
Carrier | LARGE T&R |
Device Marking | TL8542 |
Width (mm) | 3.91 |
Length (mm) | 4.9 |
Thickness (mm) | 1.58 |
Pitch (mm) | 1.27 |
Max Height (mm) | 1.75 |
Mechanical Data | 下载 |
参数化
Additional Features | Cost Optimized,EMI Hardened |
Architecture | CMOS |
CMRR(Typ) | 80 dB |
GBW(Typ) | 0.008 MHz |
Iq per channel(Max) | 0.00064 mA |
Iq per channel(Typ) | 0.0005 mA |
Number of Channels | 2 |
Offset Drift(Typ) | 0.8 uV/C |
Operating Temperature Range | -40 to 125 C |
Output Current(Typ) | 15 mA |
Package Group | SOIC |
Package Size: mm2:W x L | 8SOIC: 29 mm2: 6 x 4.9(SOIC) PKG |
Rail-to-Rail | In,Out |
Rating | Catalog |
Slew Rate(Typ) | 0.0035 V/us |
Total Supply Voltage(Max) | 3.6 +5V=5, +/-5V=10 |
Total Supply Voltage(Min) | 1.7 +5V=5, +/-5V=10 |
Vn at 1kHz(Typ) | 264 nV/rtHz |
Vos (Offset Voltage @ 25C)(Max) | 3.1 mV |
生态计划
RoHS | Compliant |
模型线
系列: TLV8542 (2)
- PTLV8542DR TLV8542DR
制造商分类
- Semiconductors > Amplifiers > Operational Amplifiers (Op Amps) > Ultra-Low-Power Op Amps (<=10uA)