Datasheet Vishay Si4435DY-REVA — 数据表

Si4435DY
Vishay Siliconix P-Channel 30-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
–30
30 rDS(on) (W) ID (A) 0.02 @ VGS = –10 V –8.0 0.035 @ VGS = –4.5 V –6.0 D Lead (Pb)-Free Version is RoHS
Compliant S SO-8
S 1 8 D S 2 7 D S 3 6 D G 4 5 D G D Top View P-Channel MOSFET
Ordering Information: Si4435DY-T1–REV A
Si4435DY-T1–A–E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_ UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Drain-Source Voltage VDS –30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C
TA = 70_C Continuous Source Current (Diode Conduction)a –6.4 IDM –50 IS –2.1 TA = 25_C A 2.5
PD TA = 70_C Operating Junction and Storage Temperature Range V –8.0
ID Pulsed Drain Current Maximum Power Dissipationa Unit 1.6 W TJ, Tstg –55 to 150 _C Symbol Limit Unit RthJA 50 _C/W THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70149
S-51472—Rev. G, 01-Aug-05 www.vishay.com 1 Si4435DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit VGS(th) VDS = VGS, ID = –250 mA –1.0 –2.0 –3.0 V IGSS VDS = 0 V, VGS = "20 V "100 nA VDS = –30 V, VGS = 0 V –1 VDS = –30 V, VGS = 0 V, TJ = 70_C –5 Static …