Datasheet InterFET 2N5021 — 数据表

Databook.fxp 1/13/99 2:09 PM Page B-18 B-18 01/99 2N5020, 2N5021 P-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 25¡C ¥ Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
Storage Temperature Range At 25°C free air temperature: 2N5020 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GDO Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS Max 25 2N5021
Min Process PJ32
Unit 25
1.5 - 0.3 - 1.2 Test Conditions V IG = 1µA, VDS = ØV 1 nA VGS = 15V, VDS = ØV 0.5 2.5 V VDS = - 15V, ID = 1 nA -1 - 3.5 mA VDS = - 15V, VGS = ØV 1.5 6 mS VDS = - 15V, VGS = ØV 1
0.3 Max - 50 V
50 mA
500 mW
4 mW/°C
- 65°C to + 200°C Dynamic Electrical Characteristics
Common Source
Forward Transconductance gfs Common Source Output Conductance gos 20 20 µS VDS = - 15V, VGS = ØV Common Source Input Capacitance Ciss 25 25 pF VDS = - 15V, VGS = ØV f = 1 MHz Common Source
Reverse Transfer Capacitance Crss 7 7 pF VDS = - 15V, VGS = ØV f = 1 MHz 1 3.5 TOÐ18 Package Surface Mount Dimensions in Inches (mm) SMP5020, SMP5021 Pin Configuration
1 Source 1, 2 Gate & Case, 3 Drain
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