BC560C
Low Noise Transistors
PNP Silicon
Features • These are Pb−Free Devices* http://onsemi.com
COLLECTOR
1 MAXIMUM RATINGS
Rating Symbol Value Unit Collector −Emitter Voltage VCEO −45 Vdc Collector −Base Voltage VCBO −50 Vdc Emitter−Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −100 mAdc Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C PD 625
5.0 mW
mW/°C Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C PD 1.5
12 W
mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction
Temperature Range 2
BASE
3
EMITTER TO−92
CASE 29
STYLE 17
1 12 THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W 3
STRAIGHT LEAD
BULK PACK Stresses exceeding Maximum Ratings may damage the device. Maximum
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