Datasheet Texas Instruments LMG1210RVRT — 数据表
| 制造商 | Texas Instruments |
| 系列 | LMG1210 |
| 零件号 | LMG1210RVRT |
具有可调死区时间19-WQFN的200V，1.5A / 3A半桥GaN驱动器-40至125
数据表
LMG1210 200-V, 1.5-A, 3-A Half-Bridge GaN Driver With Adjustable Dead Time datasheet
PDF, 596 Kb, 档案已发布: Feb 14, 2018
从文件中提取
价格
状态
| Lifecycle Status | Preview (Device has been announced but is not in production. Samples may or may not be available) |
| Manufacture's Sample Availability | No |
打包
| Pin | 19 |
| Package Type | RVR |
| Package QTY | 250 |
| Carrier | SMALL T&R |
| Width (mm) | 4 |
| Length (mm) | 3 |
| Thickness (mm) | 0.75 |
| Mechanical Data | 下载 |
参数化
| Bus Voltage | 200 V |
| Driver Configuration | Half Bridge |
| Fall Time | 0.5 ns |
| Input Threshold | TTL |
| Input VCC(Max) | 18 V |
| Input VCC(Min) | 6 V |
| Number of Channels | 2 |
| Operating Temperature Range | -40 to 125 C |
| Package Group | WQFN |
| Package Size: mm2:W x L | 19WQFN: 12 mm2: 4 x 3(WQFN) PKG |
| Peak Output Current | 3 A |
| Power Switch | MOSFET,GaNFET |
| Prop Delay | 10 ns |
| Rating | Catalog |
| Rise Time | 0.5 ns |
生态计划
| RoHS | See ti.com |
设计套件和评估模块
- Evaluation Modules & Boards: LMG1210EVM-012
LMG1210 Half-bridge Open Loop Evaluation Module
Lifecycle Status: Active (Recommended for new designs)
应用须知
- Optimizing Efficiency Through Dead Time Control With the LMG1210 GaN DriverPDF, 139 Kb, 档案已发布: Feb 14, 2018
Dead time is an extremely important design parameter in some high-frequency converters using GaN.Dead time becomes ever more important as the frequency of operation increases. This reportdemonstrates the need for dead time optimization by measuring efficiency of a converter with varyingdead times. This report also discusses the various sources of propagation delay mismatch which causedead
模型线
系列: LMG1210 (3)
- LMG1210RVRR LMG1210RVRT XLMG1210RVRT
制造商分类
- Semiconductors > Power Management > Gallium Nitride (GaN) Solutions > GaN FET Drivers