Datasheet Texas Instruments LMG1210 — 数据表
| 制造商 | Texas Instruments |
| 系列 | LMG1210 |
具有可调死区时间的200V，1.5A / 3A半桥GaN驱动器
数据表
LMG1210 200-V, 1.5-A, 3-A Half-Bridge GaN Driver With Adjustable Dead Time datasheet
PDF, 596 Kb, 档案已发布: Feb 14, 2018
从文件中提取
价格
状态
| LMG1210RVRR | LMG1210RVRT | XLMG1210RVRT | |
|---|---|---|---|
| Lifecycle Status | Preview (Device has been announced but is not in production. Samples may or may not be available) | Preview (Device has been announced but is not in production. Samples may or may not be available) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No | No | Yes |
打包
| LMG1210RVRR | LMG1210RVRT | XLMG1210RVRT | |
|---|---|---|---|
| N | 1 | 2 | 3 |
| Pin | 19 | 19 | 19 |
| Package Type | RVR | RVR | RVR |
| Package QTY | 3000 | 250 | 250 |
| Carrier | LARGE T&R | SMALL T&R | SMALL T&R |
| Width (mm) | 4 | 4 | 4 |
| Length (mm) | 3 | 3 | 3 |
| Thickness (mm) | 0.75 | 0.75 | 0.75 |
| Mechanical Data | 下载 | 下载 | 下载 |
参数化
| Parameters / Models | LMG1210RVRR | LMG1210RVRT | XLMG1210RVRT |
|---|---|---|---|
| Bus Voltage, V | 200 | 200 | 200 |
| Driver Configuration | Half Bridge | Half Bridge | Half Bridge |
| Fall Time, ns | 0.5 | 0.5 | 0.5 |
| Input Threshold | TTL | TTL | TTL |
| Input VCC(Max), V | 18 | 18 | 18 |
| Input VCC(Min), V | 6 | 6 | 6 |
| Number of Channels | 2 | 2 | 2 |
| Operating Temperature Range, C | -40 to 125 | -40 to 125 | -40 to 125 |
| Package Group | WQFN | WQFN | WQFN |
| Package Size: mm2:W x L, PKG | 19WQFN: 12 mm2: 4 x 3(WQFN) | 19WQFN: 12 mm2: 4 x 3(WQFN) | 19WQFN: 12 mm2: 4 x 3(WQFN) |
| Peak Output Current, A | 3 | 3 | 3 |
| Power Switch | MOSFET,GaNFET | MOSFET,GaNFET | MOSFET,GaNFET |
| Prop Delay, ns | 10 | 10 | 10 |
| Rating | Catalog | Catalog | Catalog |
| Rise Time, ns | 0.5 | 0.5 | 0.5 |
生态计划
| LMG1210RVRR | LMG1210RVRT | XLMG1210RVRT | |
|---|---|---|---|
| RoHS | See ti.com | See ti.com | See ti.com |
应用须知
- Optimizing Efficiency Through Dead Time Control With the LMG1210 GaN DriverPDF, 139 Kb, 档案已发布: Feb 14, 2018
Dead time is an extremely important design parameter in some high-frequency converters using GaN.Dead time becomes ever more important as the frequency of operation increases. This reportdemonstrates the need for dead time optimization by measuring efficiency of a converter with varyingdead times. This report also discusses the various sources of propagation delay mismatch which causedead
模型线
系列: LMG1210 (3)
制造商分类
- Semiconductors > Power Management > Gallium Nitride (GaN) Solutions > GaN FET Drivers