Datasheet Rohm 2SC4115S — 数据表

Low Frequency Transistor (20V, 3A)
2SC4115S
zFeatures
1) Low VCE(sat).
VCE(sat) = 0.2V(Typ.)
пј€IC / IB = 2A / 0.1Aпј‰
2) Excellent current gain characteristics.
3) Complements the 2SA1585S. zDimensions(Unit:mm)
2SC4115S
2В±0.2 (15Min.) 3Min. 3В±0.2 4В±0.2 zStructure
Epitaxial planar type
NPN silicon transistor 0.45+0.15
-0.05 2.5 +0.4
-0.1 0.5 0.45 +0.15
-0.05 5 zAbsolute maximum ratings (Ta=25В°C)
Parameter (1) (2) (3) Symbol Limits Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V (1) Emitter
(2) Collector
(3) Base в€— Denotes hFE A (DC) 2 Collector current IC Collector power dissipation PC 0.4 W Junction temperature Tj 150 В°C Storage temperature Tstg -55 to +150 В°C в€— ROHM : SPT
EIAJ : SC-72 A (Pulse) в€— 5 Single pulse Pw=10ms zElectrical characteristics (Ta=25В°C)
Parameter Symbol Min. Typ. Max. Collector-base breakdown voltage BVCBO 40 -V IC=50ВµA Collector-emitter breakdown voltage BVCEO 20 -V IC=1mA Emitter-base breakdown voltage Unit Conditions BVEBO 6 -V IE=50ВµA Collector cutoff current ICBO -0.1 ВµA VCB=30V Emitter cutoff current IEBO -0.1 ВµA VEB=5V VCE(sat) -0.2 0.5 V IC/IB=2A/0.1A hFE 120 -390 -VCE=2V, IC=0.1A Transition frequency fT -290 -MHz Output capacitance Cob -25 -pF Collector-emitter saturation voltage
DC current transfer ratio в€— VCE=2V, IE= -0.5A, f=100MHz
VCE=10V, IE=0A, f=1MHz в€— Measured using pulse current. www.rohm.com
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