Datasheet ON Semiconductor FDMS8690 — 数据表

FDMS8690
N-Channel Power TrenchВ® MOSFET
30V, 27A, 9.0mΩ
Features tm General Description „ Max rDS(on) = 9.0mΩ at VGS = 10V, ID = 14.0A This device has been designed specifically to improve the
efficiency of DC/DC converters. Using new techniques in
MOSFET construction, the various components of gate charge
and capacitance have been optimized to reduce switching
losses. Low gate resistance and very low Miller charge enable
excellent performance with both adaptive and fixed dead time
gate drive circuits. Very low rDS(on) has been maintained to
provide an extremely versatile device. „ Max rDS(on) = 12.5mΩ at VGS = 4.5V, ID = 11.5A
В„ High performance trench technology for extremely low rDS(on)
and gate charge
В„ Minimal Qgd (2.9nC typical)
В„ RoHS Compliant Application
В„ High Efficiency DC-DC converters.
В„ Notebook CPU power supply
В„ Multi purpose Point of Load S Pin 1 D S S D D G D 5 4 G D 6 3 S D 7 2 S D 8 1 S D Power 56 (Bottom view) MOSFET Maximum Ratings TA = 25В°C unless otherwise noted
Symbol
VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage
Drain Current ID -Continuous (Package limited) TC = 25В°C -Continuous (Silicon limited) TC = 25В°C
TA = 25В°C -Continuous TJ, TSTG Units
V В±20 V 27 …