Datasheet New Jersey Semiconductor IRFP362 — 数据表

晶体管N-CH 400V 23A 3-Pin（3 + Tab）TO-247AD

数据表

PDF, 650 Kb, 文件上传: Jun 22, 2018, 页数: 2
Avalanche-Energy-Rated N-Channel Power MOSFETs

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Category	Power MOSFET
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
Material	Si
Maximum Continuous Drain Current	23 A
Maximum Drain Source Voltage	400 V
Maximum Gate Source Voltage	±20 V
Maximum Power Dissipation	300000 mW
Number of Elements per Chip	1
Operating Temperature Max	150 °C
Operating Temperature Min	-55 °C