SiC MOSFET
SiC MOSFET Diode
LSIC1MO170E1000, 1700 V, 1000 mOhm, TO-247-3L LSIC1MO170E1000 1700 V N-channel, Enhancement-mode SiC MOSFET RoHS Product Summary
Characteristics Circuit Diagram TO-247-3L Value Unit VDS 1700 V Typical RDS(ON) 750 mΩ ID ( TC ≤ 100 °C) 3.5 A Features
• O
ptimized for highfrequency, high-efficiency
applications • N
ormally-off operation at
all temperatures
• Ultra-low on-resistance • E
xtremely low gate
charge and output
capacitance
*
* Body
diode
1 2 • L
ow gate resistance for
high-frequency switching 3 Environmental
• L
ittelfuse “RoHS” logo =
RoHS conform Applications
RoHS • L …
