Datasheet Vishay V30120CI — 数据表
制造商 | Vishay |
系列 | V30120CI |
双路高压沟道MOS势垒肖特基整流器超低VF = 0.49 V(IF = 5 A时)
数据表
V30120CI
www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.49 V at IF = 5 A
FEATURES TMBS ® • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
2 3 TYPICAL APPLICATIONS 1
PIN 1 PIN 2 PIN 3 CASE For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS
IF(AV) Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 -halogen-free, RoHS-compliant, and
commercial grade 2 x 15 A VRRM 120 V IFSM 160 A VF at IF = 15 A (125 °C) 0.66 V TJ max. 150 °C Package TO-220AB Diode variation Common cathode Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test per Polarity: as marked
Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1) per device …