PDF, 108 Kb, 语言: en, 修订版: C, 档案已发布: Feb 8, 2017
从文件中提取
Si9424BDY
Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY
VDS (V)
-20 RDS(on) (Ω) ID (A) 0.025 at VGS = -4.5 V -7.1 0.033 at VGS = -2.5 V -6.1 • Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC SO-8 S S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View
D Ordering Information: Si9424BDY-T1-E3 (Lead (Pb)-free)
Si9424BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±9 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C
TA = 70 °C Continuous Source Current (Diode Conduction)a IS
TA = 25 °C
TA = 70 °C PD -5.6 -5.6 -4.5
-30 -1.7 -1.0 2.0 1.25 1.3 0.8 TJ, Tstg Operating Junction and Storage Temperature Range V -7.1 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit -55 to 150 A W
°C THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain) Symbol
t ≤ 10 s
Steady State
Steady State RthJA
RthJF Typical Maximum 50 62.5 80 100 30 40 Unit
°C/W Notes: …