Datasheet ON Semiconductor BSS138-T — 数据表

BSS138 BSS138
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features These
N-Channel
enhancement mode field
effect transistors are produced using
ON
Semicondcutor's proprietary, high cell density, DMOS
technology. These products have been designed to
minimize on-state resistance while provide rugged,
reliable, and fast switching performance.These
products are particularly suited for low voltage, low
current applications such as small servo motor
control, power MOSFET gate drivers, and other
switching applications. • 0.22 A, 50 V. RDS(ON) = 3.5Ω @ VGS = 10 V
RDS(ON) = 6.0Ω @ VGS = 4.5 V
• High density cell design for extremely low RDS(ON)
• Rugged and Reliable
• Compact industry standard SOT-23 surface mount
package D D S
S G SOT-23 G Absolute Maximum Ratings
Symbol TA=25oC unless otherwise noted Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current - Continuous (Note 1) - Pulsed
(Note 1) Derate Above 25°C …