Datasheet Diodes DGTD120T25S1PT — 数据表

DGTD120T25S1PT
1200V FIELD STOP IGBT IN TO-247
Description Features The DGTD120T25S1PT is produced using advanced Field Stop
Trench IGBT Technology, which provides low VCE(sat) , excellent 
 High Speed Switching & Low VCE(sat) Loss
VCE(sat) = 2.0V @ IC = 25A quality and high-switching performance. 
 High Input Impedance
trr = 100ns (typ) @ diF/dt = 500A/µs 
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 Ultra-Soft, Fast Recovery Anti-parallel Diode
Ultra Narrowed VF Distribution Control
Positive Temperature Coefficient For Easy Parallelling
Maximum Junction Temperature 175°C
Lead-Free Finish & RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3) Applications Mechanical Data 
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