Datasheet GaN Systems GS66508T — 数据表

GS66508T
Top-side cooled 650 V E-mode GaN transistor
Preliminary Datasheet
Features
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• • 650 V enhancement mode power switch
Top-side cooled configuration
RDS(on) = 50 mΩ
IDS(max) = 30 A
Ultra-low FOM Island Technology™ die
Low inductance GaNPX® package …