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PNP Epitaxial Silicon Transistor. Switching and Amplifier
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BC556/557/558/559/560 BC556/557/558/559/560
Switching and Amplifier
• High Voltage: BC556, VCEO= -65V
• Low Noise: BC559, BC560
• Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO Parameter
Collector-Base Voltage
: BC556
: BC557/560
: BC558/559 VCEO Collector-Emitter Voltage
: BC556
: BC557/560
: BC558/559 Value Units -80
-50
-30 V
V
V -65
-45
-30 V
V
V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted …