Datasheet Infineon BC847 — 数据表
制造商 | Infineon |
系列 | BC847 |
NPN硅AF晶体管
数据表
NPN Silicon AF Transistors
BC846.-BC850.
NPN Silicon AF Transistors
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Low noise between 30 Hz and 15 kHz
• Complementary types:
BC856.-BC860.(PNP)
• Pb-free (RoHS compliant) package 1)
• Qualified according AEC Q101 1Pb-containing package may be available upon special request 1 2007-04-20 BC846.-BC850.
Type Marking Pin Configuration BC846A 1As 1=B 2=E 3=C -SOT23 BC846B 1Bs 1=B 2=E 3=C -SOT23 BC846BW 1Bs 1=B 2=E 3=C -SOT323 BC847A 1Es 1=B 2=E 3=C -SOT23 BC847B 1Fs 1=B 2=E 3=C -SOT23 BC847BF 1Fs 1=B 2=E 3=C -TSFP-3 BC847BL3 1F 1=B 2=E 3=C -TSLP-3-1 BC847BT 1F 1=B 2=E 3=C -SC75 BC847BW 1Fs 1=B 2=E 3=C -SOT323 BC847C 1Gs 1=B 2=E 3=C -SOT23 BC847CW 1Gs 1=B 2=E 3=C -SOT323 BC848A 1Js 1=B 2=E 3=C -SOT23 BC848AW 1Js 1=B 2=E 3=C -SOT323 BC848B 1Ks 1=B 2=E 3=C -SOT23 BC848BF 1Ks 1=B 2=E 3=C -TSFP-3 BC848BL3 1K 1=B 2=E 3=C -TSLP-3-1 BC848BW 1Ks 1=B 2=E 3=C -SOT323 BC848C 1Ls 1=B 2=E 3=C -SOT23 BC848CW 1Ls 1=B 2=E 3=C -SOT323 BC849B 2Bs 1=B 2=E 3=C -SOT23 BC849BF 2Bs 1=B 2=E 3=C -TSFP-3 BC849C 2Cs 1=B 2=E 3=C -SOT23 BC849CW 2Cs 1=B 2=E 3=C -SOT323 BC850B 2Fs 1=B 2=E 3=C -SOT23 BF850BF 2Fs 1=B 2=E 3=C -TSFP-3 BC850BW 2Fs 1=B 2=E 3=C -SOT323 BC850C 2Gs 1=B 2=E 3=C -SOT23 BC850CW 2Gs 1=B 2=E 3=C -SOT323 2 Package 2007-04-20 BC846.-BC850.
Maximum Ratings
Parameter Symbol Collector-emitter voltage VCEO Value V BC846. 65 BC847., BC850. 45 BC848., BC849. 30 Collector-emitter voltage Unit VCES BC846. 80 BC847., BC850. 50 BC848., BC849. 30 Collector-base voltage VCBO BC846. 80 BC847., BC850. 50 BC848., BC849. 30 Emitter-base voltage VEBO BC846. 6 BC847., BC850. 6 BC848., BC849. 6 Collector current IC 100 Peak collector current ICM 200 Total power dissipation-Ptot mW TS ≤ 71 °C, BC846-BC850 330 TS ≤ 128 °C, BC847F-BC850F 250 TS ≤ 135 °C, BC847L3-BC848L3 250 TS ≤ 109 °C, BC847T 250 TS ≤ 124 °C, BC846W-BC850W 250 Junction temperature Tj Storage temperature Tstg 3 mA 150 °C -65 . 150 2007-04-20 BC846.-BC850.
Thermal Resistance
Parameter
Junction -soldering point 1) Symbol
RthJS Value BC846-BC850 ≤ 240 BC847F-BC850F ≤ 90 BC847L3-BC848L3 ≤ 60 BC847T ≤ 165 BC846W-BC850W ≤ 105 1For Unit
K/W calculation of RthJA please refer to Application Note Thermal Resistance 4 2007-04-20 BC846.-BC850.
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter …
价格
其他选择
模型线
制造商分类
- Bipolar Single Transistors