Datasheet Fujitsu MB85AS8MTPW-G-KBAERE1 — 数据表

FUJITSU SEMICONDUCTOR
DATA SHEET DS501-00060-1v0-E Memory ReRAM 8M (1024 K  8) Bit SPI MB85AS8MT
■ DESCRIPTION
MB85AS8MT is a ReRAM (Resistive Random Access Memory) chip in a configuration of 1,048,576
words  8 bits, using the resistance-variable memory process and silicon gate CMOS process technologies
for forming the nonvolatile memory cells.
MB85AS8MT adopts the Serial Peripheral Interface (SPI).
MB85AS8MT is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85AS8MT can be used for 1  106 rewrite operations. ■ FEATURES
: 8 Mbits (1,048,576 words  8 bits)
: SPI (Serial Peripheral Interface)
Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)
Write buffer size
: 256 bytes
Operating frequency
: 10 MHz (Max)
Data endurance
: 1  106 times / 4bytes*
*4 bytes are selected by A1 to A0.
Data retention
: 10 years (+85 C)
Operating power supply voltage : 1.6 V to 3.6 V
Operating power supply current : Write current 1.5 mA (Typ) …