Datasheet Honeywell SDP8406-003 — 数据表

SDP8406
Silicon Phototransistor FEATURES
• Side-looking plastic package • 50¡ (nominal) acceptance angle
• Wide sensitivity ranges
• Mechanically and spectrally matched to
SEP8506 and SEP8706 infrared emitting diodes INFRA-21.TIF DESCRIPTION
The SDP8406 is an NPN silicon phototransistor molded
in a side-looking clear plastic package. The chip is
positioned to accept radiation through a plastic lens
from the side of the package. OUTLINE DIMENSIONS in inches (mm)
Tolerance
3 plc decimals
±0.005(0.12)
2 plc decimals ±0.020(0.51) DIM_017.ds4 120 h Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible. SDP8406
Silicon Phototransistor ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL MIN TYP MAX ABSOLUTE MAXIMUM RATINGS UNITS TEST CONDITIONS SCHEMATIC (25¡C Free-Air Temperature unless otherwise noted)
Collector-Emitter Voltage
Emitter-Collector Voltage
Power Dissipation
Operating Temperature Range
Storage Temperature Range …