Datasheet Marktech MT03-047 — 数据表

Broadband Photodiode
Product No: MT03-047 Enhanced Sensitivity Wavelengths: 250nm-1750nm The MT03-047 is a Multi Spectral Photodiode in a ceramic SAW package.
It is specifically designed for use with wavelengths ranging from 250nm Ultraviolet (UV) to
1750nm Short Wave Infrared (SWIR).
F E ATU R ES APPLICATIONS > Ultra low noise > Medical > High Shunt Resistance > Industrial > Wide Dynamic Range > Communications > 365nm Enhanced Silicon/1300nm InGaAs SWIR > Security Absolute Maximum Ratings
ITEMS SYMBOL RATINGS UNIT Reverse Voltage Vr 50 V Operating Temperature Range Topr -40 ~ +100 ºC Storage Temperature Range Tstg -55 ~ +125 ºC Lead Soldering Temperature *1 Tls 260 ºC *1: Time 5 Sec max, Position: Up to 3mm from the body. Electrical & Optical Characteristics (1.2mm Silicon-PD) Ta = 23ºC)
ITEMS SYMBOL CONDITIONS MIN TYP MAX UNIT Dark Current Id Vr=5V -1.0 nA Forward Voltage Vf If=2mA -0.1
-0.8 V Breakdown Voltage
Spectral Sensitivity Range Vb
λ Ir=10uA 3.0 V --250 1100 nm -950 -nm Vr=0V, λ=400nm 0.20 0.28 -A/W Peak Sensitivity Wavelength
Responsivity λp
Rt Responsivity Rt Vr=0V, λ=633nm -0.40 -A/W Rise Time @ 365nm
Junction Capacitance Vf Vr=0V, Rl=1kΩ -100 -ns Cj at 1MHz, Vr=0V 20 -pF -Junction Capacitance Cj at 1MHz,Vr=5V -6 8 pF Shunt Resistance Rsh Vr=10mV 1000 2000 -mΩ 2019-05-31 Global Headquarters, 3 Northway Lane North, Latham, NY 12110, USA
TOLL FREE: 1-800-984-5337 • PHONE: 518-956-2980 • FAX: www.marktechopto.com 518-785-4725 • EMAIL: info@marktechopto.com 1 Broadband Photodiode
Product No: MT03-047 Electrical & Optical Characteristics (1.0mm InGaAs-PD) Ta = 25ºC)
ITEMS SYMBOL CONDITIONS MIN TYP MAX UNIT Dark Current Id Vr=2V -2000 nA Forward Voltage Vf If=10mA -0.6 -V Breakdown Voltage Vb Ir=10uA 5 V 600 --1750 nm -1590 -nm Spectral Sensitivity Range λ Peak Sensitivity Wavelength λp Responsivity Rt Vr=0V, λ=950nm -0.4 -A/W Responsivity Rt Vr=0V, λ=1550nm -0.7 -A/W Junction Capacitance Cj Vr=0V -60 -pF Rise Time @ 950nm Vf Vr=0V, Rl=1kΩ -1.0 -ns Package Dimensions
InGaAs Photodiode
Active Area:
1.00mm Dia.
0.78mm² 3 2 2.54 1.30
Pin 1
Index 1 1 2 3
1.17 4 8 5 6 Si Photodiode …