Datasheet Nexperia GAN063-650WSAQ — 数据表

GAN063-650WSA 650 V, 50 mΩ Gallium Nitride (GaN) FET
27 November 2019 Product data sheet 1. General description
The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that
combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET
technologies — offering superior reliability and performance. AEC-Q101 qualified. 2. Features and benefits
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• Ultra-low reverse recovery charge
Simple gate drive (0 V to +10 V or 12 V)
Robust gate oxide (±20 V capability)
High gate threshold voltage (+4 V) for very good gate bounce immunity
Very low source-drain voltage in reverse conduction mode
Transient over-voltage capability (800 V)
AEC-Q101 qualified 3. Applications
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• Hard and soft switching converters for industrial and datacom power
Bridgeless totempole PFC …