Datasheet Infineon 2ED2106S06F — 数据表
650 V，0.7 A高端和低端栅极驱动器，采用DSO-8封装，集成了自举二极管
数据表
Datasheet 2ED2106 (4) S06F (J)
PDF, 876 Kb, 语言: en, 修订版: 02_10, 文件上传: Jan 13, 2020, 页数: 24
650 V high-side and low-side gate driver with integrated bootstrap diode
650 V high-side and low-side gate driver with integrated bootstrap diode
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价格
状态
| 2ED2106S06FXUMA1 | |
|---|---|
| Lifecycle Status | Active (Recommended for new designs) |
其他选择
模型线
系列: 2ED2106S06F (1)
制造商分类
- Power > Gate Driver ICs