Datasheet Rohm SCT3160KLGC11 — 数据表

SCT3160KL
Datasheet N-channel SiC power MOSFET
lOutline VDSS 1200V RDS(on) (Typ.) 160mW ID 17A PD 103W TO-247N (1)(2)(3) lInner circuit
lFeatures (1) Gate
(2) Drain
(3) Source 1) Low on-resistance
2) Fast switching speed *1 Body Diode 3) Fast reverse recovery
4) Easy to parallel
lPackaging specifications 5) Simple to drive Packing Tube 6) Pb-free lead plating ; RoHS compliant
Reel size (mm) -Tape width (mm) -Type lApplication Basic ordering unit (pcs) ・Solar inverters Taping code ・DC/DC converters 30
C11 Marking SCT3160KL ・Switch mode power supplies
・Induction heating
・Motor drives
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain -Source voltage
Continuous drain current Value Unit VDSS 1200 V Tc = 25°C ID *1 17 A Tc = 100°C ID *1 12 A ID,pulse *2 42 A VGSS -4 to +22 V -4 to +26 V 0 / +18 V Tj 175 °C Tstg -55 to +175 °C Pulsed drain current
Gate -Source voltage (DC)
Gate-Source Surge Voltage (tsurge < 300nsec) VGSS_surge Recommended Drive Voltage VGS_op Junction temperature
Range of storage temperature www.rohm.com
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TSZ22111・14・001 Symbol 1/12 *4 *3 TSQ50211-SCT3160KL
14.Jun.2018 -Rev.005 Datasheet SCT3160KL …