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Automotive Grade N-channel SiC power MOSFET
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SCT3160KLHR Automotive Grade N-channel SiC power MOSFET Datasheet lOutline VDSS
RDS(on) (Typ.)
ID*1
PD 1200V
160mΩ
17A
103W TO-247N (1) (2)(3) lInner circuit
lFeatures (1) Gate
(2) Drain
(3) Source 1) Qualified to AEC-Q101
2) Low on-resistance *Body Diode 3) Fast switching speed
4) Fast reverse recovery Please note Driver Source and Power Source are
not exchangeable. Their exchange might lead to
malfunction. 5) Easy to parallel
6) Simple to drive
7) Pb-free lead plating ; RoHS compliant lPackaging specifications lApplication Packing ・Automobile Reel size (mm) -Tape width (mm) -・Switch mode power supplies Type Tube Basic ordering unit (pcs) 30 Taping code C11 Marking SCT3160KL lAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol Value Unit VDSS 1200 V Tc = 25°C ID *1 17 A Tc = 100°C ID *1 12 A ID,pulse *2 42 A -4 to +22 V -4 to +26 V VGS_op*4 0 / +18 V Tj 175 °C Tstg -55 to +175 °C Drain -Source Voltage
Continuous Drain current
Pulsed Drain current VGSS Gate -Source voltage (DC)
Gate -Source surge voltage (tsurge < 300nsec) VGSS_surge Recommended drive voltage
Junction temperature
Range of storage temperature www.rohm.com
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