Datasheet DEC 1N60P — 数据表

1N60, 1N60P GERMANIUM DIODES Features Metal silicon junction, majority carrier conduction DO-35(GLASS) High current capability, Low forward voltage drop Extremely low reverse current lR Ultra speed switching characteristics 0.075(1.9)
MAX.
DIA. Small temperature coefficient of forward characteristics 1.083(27.5)
MIN. Satisfactory Wave detection efficiency For use in RECORDER, TV, RADIO, TELEPHONE as detectors,
super high speed switching circuits, small current rectifier 0.154(3.9)
MAX. Mechanical Data Case : DO-35 glass case 1.083(27.5)
MIN. 0.020(0.52)
MAX.
DIA. Polarity : Color band denotes cathode end Weight : Approx. 0.13 gram Dimensions in inches and (millimeters) Absolute Ratings (Limiting Values)
Symbols
VRRM
lF
lFSM
TSTG/TJ
TL Value Parameters
Zenerepetitive Peak Reverse Voltage
TA=25℃ Forward Continuous Crrent
Peak Forward Surge Current(t=1S) Units 1N60 1N60P 40 45 Volts 30 50 mA 150 500 mA Storage junction Temperature Range
Maximum Lead Temperature for soldering 10S at 4mm from Case -65 to+125 ℃ 230 ℃ Electrical characteristics
Symbols Parameters IF=1mA VF Forward Voltage IF=30mA
IF=200mA lR Reverse Current VR=15V CJ Junction Capacitance η Detection Effcienc(See diagram 4) trr Revese Recovery time RθJA Junction Amblent Thermal Resistance Value Test Conditions VR=1V f=1MHz
VR=10V f=1MHz Min
1N60 …