Datasheet IXYS IXTP02N50D — 数据表

IXTY02N50D
IXTU02N50D
IXTP02N50D High Voltage
Power MOSFET VDSX =
=
 ID25 RDS(on) 500V
200mA
30 D N-Channel TO-252 (IXTY) G G
S S D (Tab) TO-251 (IXTU)
Symbol Test Conditions VDSX TJ = 25C to 150C Maximum Ratings
500 V VDGX TJ = 25C to 150C 500 V VGSX Continuous 20 V VGSM Transient 30 V ID25
IDM TC = 25C
TC = 25C, Pulse Width Limited by TJ 200
800 mA
mA PD TC = 25C
TA = 25C 25
1.1 W
W -55 . +150
150
-55 . +150 C
C
C 300
260 °C …