Datasheet Diodes ZHB6790 — 数据表

SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIMINARY DATA SHEET ISSUE B JULY 1997
FEATURES
* Compact package
* Low on state losses
* Low drive requirements
* Operates up to 40V supply
* 2 Amp continuous rating
SM-8
(8 LEAD SOT223) PARTMARKING DETAIL – ZHB6790 ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL NPNs PNPs UNIT Collector-Base Voltage VCBO 50 -50 V Collector-Emitter Voltage VCEO 40 -40 V Emitter-Base Voltage VEBO 5 -5 V Peak Pulse Current ICM 6 -6 A Continuous Collector Current IC 2 -2 Operating and Storage Temperature Range Tj:Tstg SCHEMATIC DIAGRAM A -55 to +150 °C CONNECTION DIAGRAM C3, C4
B2 Q2 Q3 E2, E3 B3 B4 4 C3,C4
C1, C2 B1 3 E1,E4 B2 2 B4 E2,E3 1 Q4 6 Q1 7 B1 8 C1,C2 5 E1, E4 B3 ZHB6790
THERMAL CHARACTERISTICS
PARAMETER SYMBOL VALUE UNIT Total Power Dissipation at Tamb = 25°C*
Any single transistor “on”
Q1 and Q3 “on” or Q2 and Q4 “on” equally Ptot 1.25
2 W
W Derate above 25°C*
Any single transistor “on”
Q1 and Q3 “on” or Q2 and Q4 “on” equally 10
16 mW/ °C
mW/ °C Thermal Resistance -Junction to Ambient*
Any single transistor “on” …