Datasheet STMicroelectronics M29W040B120K6 — 数据表

M29W040B
4 Mbit (512Kb x8, Uniform Block)
Low Voltage Single Supply Flash Memory
■ SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME
– 10µs per Byte typical ■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS ■ PROGRAM/ERASE CONTROLLER PLCC32 (K) TSOP32 (N)
8 x 20mm – Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
■ ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend ■ TSOP32 (NZ)
8 x 14mm UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming ■ LOW POWER CONSUMPTION
– Standby and Automatic Standby ■ 100,000 PROGRAM/ERASE CYCLES per
BLOCK ■ 20 YEARS DATA RETENTION Figure 1. Logic Diagram VCC – Defectivity below 1 ppm/year
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: E3h ■ 19 8 A0-A18 DQ0-DQ7 ECOPACK® PACKAGES AVAILABLE
W M29W040B E
G VSS
AI02953 September 2005 1/20 M29W040B
Figure 3. TSOP Connections A12 …