Datasheet Samsung K6R1008V1D-J(T)C(I) 08/10 — 数据表

for AT&T
CMOS SRAM K6R1016V1D
Document Title
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating)
Operated at Commercial and Industrial Temperature Ranges. Revision History
Rev. No. History Rev. 0.0
Rev. 0.1
Rev. 0.2 Initial document.
Speed bin modify
Current modify May. 11. 2001
June. 18. 2001
September. 9. 2001 Preliminary
Preliminary
Preliminary Rev. 1.0 1. Delete 12ns speed bin.
2. Change Icc for Industrial mode.
Item
Previous
8ns
100mA
ICC(Industrial)
10ns
85mA December. 18. 2001 Final Draft Data Remark Current
90mA …