2SJ305
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ305
High Speed Switching Applications
Analog Applications
• High input impedance • Low gate threshold voltage.: Vth = −0.5 to −1.5 V • Excellent switching times.: ton = 0.06 μs (typ.) Unit: mm toff = 0.15 μs (typ.)
• Low drain-source ON resistance: RDS (ON) = 2.4 Ω (typ.) • Small package. • Complementary to 2SK2009 Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit Drain-source voltage VDS −30 V Gate-source voltage VGSS ±20 V DC drain current ID −200 mA JEITA SC-59 Drain power dissipation PD 200 mW TOSHIBA 2-3F1F Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C JEDEC TO-236MOD Weight: 0.012 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This transistor is electrostatic sensitive device.
Please handle with caution. Marking Equivalent Circuit Start of commercial production 1992-04 1 2014-03-01 2SJ305
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current Symbol
IGSS
V (BR) DSS
IDSS Test Condition …
