Datasheet Fairchild H11AV1A — 数据表

H11AV1M, H11AV1AM, H11AV2M, H11AV2AM
Phototransistor Optocouplers
Features Description ■ H11AV1M and H11AV2M feature 0.3" input-output The general purpose optocouplers consist of a gallium
arsenide infrared emitting diode driving a silicon
phototransistor in a 6-pin dual in-line white package. ■
■
■
■ lead spacing
H11AV1AM and H11AV2AM feature 0.4" input-output
lead spacing
UL recognized (File #E90700, Vol. 2)
VDE recognized (File #102497)
Add option V (e.g., H11AV1AVM) Applications
■ Power supply regulators
■ Digital logic inputs
■ Microprocessor inputs Schematic
ANODE 1 CATHODE 2 Package Outlines
6 BASE 5 COLLECTOR H11AV1SM, H11AV2SM N/C 3 4 EMITTER H11AV1M, H11AV2M H11AV1AM, H11AV2AM ©2005 Fairchild Semiconductor Corporation
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 www.fairchildsemi.com H11AV1M, H11AV1AM, H11AV2M, H11AV2AM — Phototransistor Optocouplers September 2009 Symbol Parameter Value Units TOTAL DEVICE
TSTG Storage Temperature -40 to +150 °C TOPR Operating Temperature -40 to +100 °C TSOL
PD Wave Solder Temperature (see page 8 for reflow solder profiles)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C 260 for 10 sec °C 250 mW 2.94 mW/°C EMITTER …

GlobalOptoisolator The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared
emitting diode optically coupled to a monolithic silicon phototransistor detector.
• Guaranteed 70 Volt V(BR)CEO Minimum
• ‘A’ Suffix = 0.400″ Wide Spaced Leadform (Same as ‘T’ Suffix.)
• To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option. 6 Applications 1 STANDARD THRU HOLE • General Purpose Switching Circuits
• Interfacing and coupling systems of different potentials and impedances
• Monitor and Detection Circuits
• Regulation and Feedback Circuits SCHEMATIC • Solid State Relays
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Reverse Voltage VR 6 Volts Forward Current — Continuous IF 60 mA LED Power Dissipation @ TA = 25°C
with Negligible Power in Output Detector
Derate above 25°C PD 120 mW 1.41 mW/°C OUTPUT TRANSISTOR
Collector–Emitter Voltage VCEO 70 Volts Emitter–Base Voltage VEBO 7 Volts Collector–Base Voltage VCBO 70 Volts Collector Current — Continuous IC 150 mA Detector Power Dissipation @ TA = 25°C
with Negligible Power in Input LED
Derate above 25°C PD 150 mW 1.76 mW/°C VISO 7500 Vac(pk) Total Device Power Dissipation @ TA = 25°C
Derate above 25°C PD 250
2.94 mW
mW/°C Ambient Operating Temperature Range TA – 55 to +100 °C Tstg – 55 to +150 °C TL 260 °C TOTAL DEVICE Storage Temperature Range
Soldering Temperature (10 sec, 1/16″ from case) 1. Isolation surge voltage is an internal device dielectric breakdown rating.
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. 6 2 5 3 4 Unit INPUT LED Isolation Surge Voltage(1)
(Peak ac Voltage, 60 Hz, 1 sec Duration) 1 PIN 1.
2. …