Datasheet Infineon IRF6775M — 数据表

IRF6775MTRPbF DIGITAL AUDIO MOSFET Features
• Latest MOSFET Silicon technology
• Key parameters optimized for Class-D audio amplifier
applications
• Low RDS(on) for improved efficiency
• Low Qg for better THD and improved efficiency
• Low Qrr for better THD and lower EMI
• Low package stray inductance for reduced ringing and lower EMI
• Can deliver up to 250W per channel into 4Ω Load in
Half-Bridge Configuration Amplifier
• Dual sided cooling compatible Compatible with existing surface mount technologies RoHS compliant containing no lead or bromide Lead-Free (Qualified up to 260°C Reflow) Key Parameters
150 VDS RDS(on) typ. @ VGS = 10V
Qg typ.
RG(int) max. 47
25.0
3.0 V m:
nC 5
& ) & 5 DirectFET™ ISOMETRIC MZ Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
SQ SX ST SH MQ MX MT MN MZ Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as
efficiency, THD, and EMI. …