Datasheet Infineon 2ED24427N01F — 数据表

制造商Infineon
系列2ED24427N01F
Datasheet Infineon 2ED24427N01F

24 V dual-channel low-side gate driver with high current for driving large power switches

数据表

Datasheet 2ED24427N01F
PDF, 1.3 Mb, 语言: en, 修订版: 02_00, 文件上传: Jan 25, 2021, 页数: 21
10 A dual -channel low-side gate driver IC
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详细说明

EiceDRIVER™ 24 V dual-channel low-side non-inverting gate driver for MOSFETs or IGBTs with typical 10 A source and sink currents in a DSO-8 package with thermally efficient, exposed power pad. 2ED24427N01F enables higher power and faster switching frequencies in multiple applications with a reduced PCB footprint and increased reliability by simplifying high power density system design.

The 2ED24427N01F is a low-voltage, power MOSFET and IGBT non-inverting gate driver.

Proprietary latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output. The output driver features a current buffer stage. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays between two channels are matched. Internal VCC circuitry provides under voltage lockout protection that holds output low until VCC supply voltage is within operating range.

状态

2ED24427N01FXUMA1
Lifecycle StatusActive (Recommended for new designs)

模型线

系列: 2ED24427N01F (1)

制造商分类

  • Power > Gate Driver ICs