Datasheet ON Semiconductor NVBG015N065SC1 — 数据表

MOSFET – SiC Power, Single
N-Channel, D2PAK-7L
650 V, 12 mW, 145 A NVBG015N065SC1
Features • Typ. RDS(on) = 12 mW @ VGS = 18 V
•
•
•
•
• www.onsemi.com Typ. RDS(on) = 15 mW @ VGS = 15 V
Ultra Low Gate Charge (QG(tot) = 283 nC)
Low Effective Output Capacitance (Coss = 424 pF)
100% Avalanche Tested
AEC−Q101 Qualified and PPAP Capable
RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 650 V 18 mW @ 18 V 145 A Typical Applications Drain (TAB) • Automotive On Board Charger
• Automotive DC/DC Converter for EV/HEV
• Automotive Traction Inverter Gate (Pin 1) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 650 V Gate−to−Source Voltage VGS −8/+22 V TC < 175°C VGSop −5/+18 V TC = 25°C ID 145 A PD 500 W ID 103 A PD 250 W TC = 25°C IDM 422 A TA = 25°C, tp = 10 ms,
RG = 4.7 W IDSC 798 A Recommended Operation Values of Gate − Source Voltage
Continuous Drain
Current RqJC (Note 2) Steady
State Power Dissipation
RqJC (Note 2)
Continuous Drain …