Datasheet ON Semiconductor NTH4L015N065SC1 — 数据表

MOSFET -SiC Power, Single
N-Channel, TO247-4L
650 V, 12 mW, 142 A NTH4L015N065SC1
Features • Typ. RDS(on) = 12 m @ VGS = 18 V
•
•
•
•
• www.onsemi.com Typ. RDS(on) = 15 m @ VGS = 15 V
Ultra Low Gate Charge (QG(tot) = 283 nC)
High Speed Switching with Low Capacitance (Coss = 430 pF)
100% Avalanche Tested
TJ = 175°C
These Devices are Pb−Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 650 V 18 m @ 18 V 142 A D Typical Applications •
•
•
• SMPS (Switching Mode Power Supplies)
Solar Inverters
UPS (Uninterruptable Power Supplies)
Energy Storages G
S1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter N−CHANNEL MOSFET Symbol Value Unit Drain−to−Source Voltage VDSS 650 V Gate−to−Source Voltage VGS −8/+22 V Recommended Operation Values
of Gate−to−Source Voltage TC < 175°C VGSop −5/+18 V Steady …