Datasheet ON Semiconductor BDW47 — 数据表

BDW42G (NPN),
BDW46G,BDW47G (PNP)
Darlington Complementary
Silicon Power Transistors
This series of plastic, medium−power silicon NPN and PNP
Darlington transistors are designed for general purpose and low speed
switching applications.
Features • High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc.
• Collector Emitter Sustaining Voltage @ 30 mAdc:
•
•
•
• VCEO(sus) = 80 Vdc (min) − BDW46
100 Vdc (min) − BDW42/BDW47
Low Collector Emitter Saturation Voltage
VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc
3.0 Vdc (max) @ IC = 10.0 Adc
Monolithic Construction with Built−In Base Emitter Shunt resistors
TO−220 Compact Package
These Devices are Pb−Free and are RoHS Compliant* www.onsemi.com 15 AMP DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 VOLT, 85 WATT 4 1 MAXIMUM RATINGS …