Datasheet Analog Devices HMC1022A-SX — 数据表

GaAs, pHEMT, MMIC, 0.25 W Power
Amplifier, DC to 48 GHz
HMC1022ACHIPS Data Sheet ACG2 FUNCTIONAL BLOCK DIAGRAM P1dB: 25 dBm (typical) at dc to 30 GHz frequency range
PSAT: 26 dBm (typical) at dc to 30 GHz frequency range
Gain: 11.5 dB (typical)
Output IP3: 33 dBm (typical) at dc to 30 GHz frequency range
Supply voltage: 10 V at 150 mA
50 Ω matched I/O
Die size: 2.89 mm × 1.48 mm × 0.1 mm ACG1 FEATURES
3 4 HMC1022ACHIPS
GND
5 RFOUT/VDD
GND APPLICATIONS
VGG2 Military and space
Test instrumentation 2 GND 6
17133-001 7 ACG3 8 ACG4 1 VGG1 GND GND RFIN Figure 1. GENERAL DESCRIPTION
The HMC1022ACHIPS is a gallium arsenide (GaAs),
pseudomorphic high electron mobility transistor (pHEMT),
monolithic microwave integrated circuit (MMIC), distributed
power amplifier that operates from dc to 48 GHz. The amplifier
provides 11.5 dB of small signal gain, 0.25 W (25 dBm) output
power at 1 dB gain compression (P1dB), and a typical output
third-order intercept (IP3) of 33 dBm, while requiring 150 mA …